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| Preface | |
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| Program Committee Members | |
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| Transistor Physics History | |
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| John Bardeen and Transistor Physics | |
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| Challenges | |
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| Technology in the Internet Era | |
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| Metrology Needs and Challenges for the Semiconductor Industry | |
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| Impact of the ITRS Metrology Roadmap | |
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| Semiconductor Product Analysis Challenges Based on the 1999 ITRS | |
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| The Assembly Analytical Forum: Addressing the Analytical Challenges Facing Packaging and Assembly | |
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| Front end Processes--Materials | |
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| Silicon Wafers for the Mesoscopic Era | |
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| Front end Processes--Gate Dielectrics | |
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| Photoemission Study of Energy Band Alignment and Gap State Density Distribution for High-k Gate Dielectrics | |
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| Challenges of Gate-Dielectric Scaling, including the Vertical Replacement-Gate MOSFET | |
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| Electrical Characterization of Ultra-thin Oxides and High K Gate Dielectrics | |
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| Modeling Soft Breakdown Phenomenon under Constant Voltage Stress in Ultra Thin Gate Oxides with PSpice Circuit Simulator | |
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| Product Wafer Measurements of MOS Gate Dielectric Quality with a Small Diameter Elastic Probe | |
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| HRTEM Image Simulations of Structural Defects in Gate Oxides | |
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| HRTEM Image Simulations for Gate Oxide Metrology | |
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| Optical and Electrical Thickness Measurements of Alternate Gate Dielectrics: A Fundamental Difference | |
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| An Examination of Tantalum Pentoxide Thin Dielectric Films Using Grazing Incidence X-ray Reflectivity and Powder Diffraction | |
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| Gate Dielectric Thickness Metrology Using Transmission Electron Microscopy | |
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| Spectroscopic Evidence for a Network Structure in Plasma-Deposited Ta[subscript 2]O[subscript 5] Films for Microelectronic Applications | |
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| Minimization of Mechanical and Chemical Strain at Dielectric-Semiconductor and Internal Dielectric Interfaces in Stacked Gate Dielectrics for Advanced CMOS Devices | |
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| Characterization of Silicon-Oxynitride Dielectric Thin Films Using Grazing Incidence X-ray Photoelectron Spectroscopy | |
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| Fabrication and Electron Microprobe Characterization of Barium-Strontium-Titanate (BST) Films | |
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| Non-contact Thickness and Electrical Characterization of High-k Dielectrics | |
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| Front End Processes | |
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| Junction Depth Measurement Using Carrier Illumination | |
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| Novel Techniques for Data Retention and Leff Measurements in Two Bit microFLASH Memory Cells | |
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| Characterizing Interfacial Roughness by Light Scattering Ellipsometry | |
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| Directional Mass Analysis of Ozone Dissociation during Thin Oxide Formation with Highly Concentrated Ozone | |
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| TEM Analysis of 64M Flash Memory Using FIB Sample Preparation Techniques | |
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| Power Spectral Density Functions for Si Wafer Surfaces Using Six Measurement Techniques | |
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| Non-contact Defect Diagnostics in Cz-Si Wafers Using Resonance Ultrasonic Vibrations | |
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| Front End Processes--Electrical Characterization | |
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| Quantitative Analysis of Copper Contamination in Silicon by Surface Photovoltage Minority Carrier Lifetime Analysis | |
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| COCOS (Corona Oxide Characterization of Semiconductor) Non-contact Metrology for Gate Dielectrics | |
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| "Gated-Diode" Configuration in SOI MOSFET's: A Sensitive Tool for Evaluating the Quality and Reliability of the Buried Si/SiO[subscript 2] Interface | |
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| Front End Processes--In-Situ | |
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| Investigation and Control of Spatial Characteristics of Chamber-Cleaning Plasmas | |
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| Comparison of the Identities, Fluxes, and Energies of Ions Formed in High Density Fluorocarbon Discharges | |
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| Development of an In-Line X-ray Reflectivity Technique for Metal Film Thickness Measurement | |
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| In-Situ Sensing Using Mass Spectrometry and Its Use for Run-to-Run Control on a W-CVD Cluster Tool | |
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| ITS-90 Calibration of Radiation Thermometers for RTP Using Wire/Thin-Film Thermocouples on a Wafer | |
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| Non-destructive Characterization of CMP Pads Using Scanning Ultrasonic Transmission | |
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| Monitoring Ion Current and Ion Energy during Plasma Processing Using Radio-Frequency Current and Voltage Measurements | |
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| Fiber Optic Based Optical Tomography Sensor for Monitoring Plasma Uniformity | |
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| Contamination and Defect Analysis | |
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| Chemical Contamination Control in ULSI Wafer Processing | |
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| Full Wafer Particle Defect Characterization | |
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| A Numerical/Experimental Investigation of Microcontamination in a Rotating Disk Chemical Vapor Deposition Reactor | |
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| Detection of Organic Contamination on Silicon Substrates: Comparison of Several Techniques | |
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| On Problems in Obtaining Root Cause Analysis of Al-Based Particles | |
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| PEEM Imaging and Modeling of Dopant-Concentration Variation in Si Devices | |
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| Defect Identification by Compositional Defect Review Using Auger Electron Spectroscopy | |
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| Defect Mapping Accuracy of KLA-Tencor Surfscan 6200, 6400, and SP1 | |
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| Comparison of Size Distribution of Polystyrene Spheres Produced by Pneumatic and Electrospray Nebulization | |
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| Characterization and Analysis of Microelectronic Processes Using Raman Spectroscopy | |
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| Application of Micro-Raman and Photoluminescence Spectroscopy to Defect and Thin Film Characterization | |
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| Lithography | |
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| The Status and Future of Imaging Metrology Needs for Lithography | |
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| Critical Issues in Overlay Metrology | |
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| Small-Angle Neutron Scattering Measurements for the Characterization of Lithographically Prepared Structures | |
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| New Developments in Deep Ultraviolet Laser Metrology for Photolithography | |
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| Secondary Electron Image Profiles Using Bias Voltage Technique in Deep Contact Hole | |
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| A Hybrid Analysis of Ellipsometry Data from Patterned Structures | |
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| Characterization of CCD Cameras and Optics for Dimensional Metrology | |
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| Interconnect and Back End Processing | |
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| Guidelines for Selecting Multi-technology Recipes in Multilayer Filmstack Measurements | |
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| Measurement of the Dielectric Constant of Thin Films Using Goniometric Time-Domain Spectroscopy | |
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| New Photo-Acoustic Techniques for Improved In-Line Control of Opaque Metal Film Processing | |
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| Cu Electrodeposition for On-Chip Interconnections | |
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| Characterization of BPSG Films Using Neutron Depth Profiling and Neutron/X-ray Reflectometry | |
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| Energy Dispersive X-ray Analysis Using a Microcalorimeter Detector | |
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| Polysilicon Chemical-Mechanical Polishing Process Characterization Using a Non-contact Capacitance Probe Technique | |
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| Interconnect and Back End Processing--Low-K | |
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| The Transition to Cu, Damascene and Low-K Dielectrics for Integrated Circuit Interconnects, Impacts on the Industry | |
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| Mechanical Characterization of Low-K Dielectric Materials | |
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| Investigation of N[subscript 2] Plasma Effects on the Depth Profile of Hydrogen Silsesquioxane Thin Films Using High Resolution Specular X-ray Reflectivity | |
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| High Sensitivity Technique for Measurement of Thin Film Out-of-Plane Expansion. II. Conducting and Semiconducting Samples | |
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| Nanoscale Elastic Imaging and Mechanical Modulus Measurements of Aluminum/Low-k Dielectric Interconnect Structures | |
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| Structure and Property Characterization of Low-k Dielectric Porous Thin Films Determined by X-ray Reflectivity and Small-Angle Neutron Scattering | |
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| Thin Film | |
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| Semiconductor Material Applications of Rapid X-ray Reflectometry (XRR) | |
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| Recent Progress in Picosecond Ultrasonic Process Metrology | |
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| Non-contact Metal Film Metrology Using Impulsive Stimulated Thermal Scattering | |
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| Critical Analytical Techniques | |
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| New Challenges for Analytical TEM in Device Characterization | |
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| Gate Dielectric Metrology Using Advanced TEM Measurements | |
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| Low Voltage Microanalysis Using Microcalorimeter EDS | |
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| Spectroscopic Ellipsometry from the Vacuum Ultraviolet to the Far Infrared | |
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| Critical Analytical Techniques--Optical Characterization | |
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| Optical Metrology for DMD Characterization | |
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| Backside Picosecond Timing Measurements on CMOS Integrated Circuits | |
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| Optical Constants for Metrology of Hydrogenated Amorphous Silicon-Nitrogen Alloys on Si | |
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| Feasibility and Applicability of Integrated Metrology Using Spectroscopic Ellipsometry in a Cluster Tool | |
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| A New Purged UV Spectroscopic Ellipsometer to Characterize Thin Films and Multilayers at 157 nm | |
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| A New Lithography of Functional Plasma Polymerized Thin Films | |
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| Advanced FTIR Technology for the Chemical Characterization of Product Wafers | |
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| Critical Analytical Techniques--Physical Characterization/X-rays | |
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| Scanning Electron Microscopy: Present Capability, Future Improvements and Potential Replacements | |
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| Ultra High Resolution X-ray Detectors | |
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| X-ray Metrology by Diffraction and Reflectivity | |
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| Automated SEM and TEM Sample Preparation Applied to Copper/Low-k Materials | |
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| Characterization of Si/SiO[subscript 2] Multilaver Thin Films by Grazing Incidence X-ray Reflectivity | |
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| Measurement of Silicon Dioxide Film Thicknesses by X-ray Photoelectron Spectroscopy | |
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| Comparison of High- and Low-Voltage X-ray Mapping of an Electronic Device | |
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| Current Projects of ISO Technical Committee 201 on Surface Chemical Analysis | |
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| Characterization of Ultra-thin Dielectric Films Buried under Poly-Si Electrodes Using X-ray Reflectivity | |
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| Critical Analytical Techniques--Atom Probes/Scanning Probes | |
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| Towards Routine, Quantitative Two-Dimensional Carrier Profiling with Scanning Spreading Resistance Microscopy | |
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| Local Electrode Atom Probes: Prospects for 3D Atomic-Scale Metrology Applications in the Semiconductor and Data Storage Industries | |
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| Evaluation of MFM for Probing Electromigration Processes | |
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| FASTC2D: Software for Extracting 2D Carrier Profiles from Scanning Capacitance Microscopy Images | |
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| High Resolution Dopant Profiling Using a Tunable AC Scanning Tunneling Microscope | |
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| SCaMsim, A New Three-Dimensional Simulation Tool for Scanning Capacitance Microscopy | |
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| Experimental Investigation and 3D Simulation of Contrast Reversal Effects in Scanning Capacitance Microscopy | |
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| Gate Oxide Formation under Mild Conditions for Scanning Capacitance Microscopy | |
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| Critical Analytical Techniques--Sims/Shallow Junction Analysis | |
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| Ultra-shallow Junction Metrology Using SIMS: Obstacles and Advances | |
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| High Depth Resolution Secondary Ion Mass Spectrometry (SIMS) Analysis of Si[subscript 1-x]Ge[subscript x]:C HBT Structures | |
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| Neutron Activation Analysis for Calibration of Phosphorus Implantation Dose | |
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| High Precision Measurements of Arsenic Implantation Dose in Silicon by Secondary Ion Mass Spectrometry | |
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| Cluster Primary Ion Beam Secondary Ion Mass Spectrometry for Semiconductor Characterization | |
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| TOF-SIMS Quantification of Low Energy Arsenic Implants through Thin SiO[subscript 2] Layers | |
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| Author Index | |
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| Key Words Index | |
